Two-dimensional (2D) materials exhibit unique properties compared to their bulk counterparts, enabling advances in electronics, sensing, and energy-related applications. Among them, transition metal dichalcogenides (TMDs), particularly MoS2, stand out due to their chemical stability, low toxicity, and tunable electronic structure, including the transition from an indirect to a direct bandgap at the monolayer limit. Despite these advantages, the controlled assembly of MoS2 into vertically stacked architectures remains challenging, often resulting in poor thickness control, limited uniformity, and interfacial contamination. Here, we report a scalable strategy for the vertical assembly of MoS2 monolayers through sequential electrochemical thinning (eTH) of bulk crystals directly on Au microelectrodes. By combining mechanical transfer with iterative thinning, homobilayer and homotrilayer structures with overlapping areas up to 550 µm2 are achieved. Raman spectroscopy confirms the preservation of the 2H phase and monolayer-like behavior after each step, while Raman mapping reveals spatially consistent electronic decoupling across the stacked regions. Photoluminescence measurements show a progressive enhancement in emission intensity, reaching up to a sixfold increase after three stacking cycles, in contrast to the quenching typically observed in coupled multilayers. XPS indicates minimal oxidation and no significant phase transformation, confirming the structural and chemical integrity of the assembled layers. Importantly, the method can be extended to other TMDs, enabling the controlled fabrication of vdW heterostructures with tunable interlayer coupling for applications in catalysis, sensing, and energy conversion.
Comissão Organizadora
Pedro Alves da Silva Autreto
Comissão Científica
Ferramenta completa de submissão, avaliação e publicação de anais para eventos científicos.
